2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f MMST5551 transistor (npn) features power dissipation p cm: 0.2 w (tamb=25 ) collector current i cm: 0.2 a collector-base voltage v (br)cbo : 160 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 180 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 160 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 5 v collector cut-off current i cbo v cb = 120 v, i e =0 50 na emitter cut-off current i ebo v eb = 3 v, i c =0 50 na h fe(1) v ce = 5 v, i c = 1 ma 80 h fe(2) v ce = 5 v, i c = -10 ma 80 250 dc current gain h fe(3) v ce = 5 v, i c = 50 ma 30 v ce(sat) i c = 10 ma, i b = 1 ma 0.15 v collector-emitter saturation voltage v ce(sat) i c = 50 ma, i b = 5 ma 0.2 v v be(sat) i c = 10 ma, i b = 1 ma 1 v base-emitter voltage v be(sat) i c = 50 ma, i b = 5 ma 1 v transition frequency f t v ce = 10 v, i c = 10 ma, f=100mhz 100 300 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 6 pf noise figure nf v ce = 5 v, i c = 0.2 ma, f= 1k hz, rg=1 0 ? 8 db marking k4n unit: mm sot-323 1. base 2. emitter 3. collector MMST5551 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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